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학술지상세정보

KCI등재 SCI SCIE

Journal of the Korean Physical Society (J. Korean Phys. Soc.)

학술지상세정보
연구분야
자연과학
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ISSN 0374-4884
eISSN 1976-8524 창간년
발행간기 연12회이상 최근발행정보 2021 년 03 월 78(6)
언어 영어

엑셀
학술지발간현황
번호 논문제목 저자명 페이지 피인용횟수
1 Quasiclassical Creation of Particles from Eternal Black Holes Daniele Colosi 1~4 0
2 Sachs-Wolfe Effect in Anisotropic Spacetime Doo Jong Song 5~15 0
3 Dynamical Influence of Cosmic Rays on Cosmic Structures Dongsu Ryu 16~20 0
4 Statistical-Mechanical Entropy by the Thin-Layer Method He Feng 21~23 2
5 On the Interpretation of the Burst Structure in GRB Phenomena Federico Fraschetti 24~30 1
6 Dilatonic Wormholes and Black Holes Sean A. Hayward 31~35 11
7 Density Fluctuations at the Quark-Hadron Phase Transition Epoch and Quark Nugget Formation Hee Il Kim 36~39 0
8 Evolution of a System of Rotating Black Hole - Magnetized Accretion Disk in the Central Region of GRB Hui-Kyung Kim 40~46 3
9 Two-Dimensional Accretion Flow Driven by Poynting Flux Hyun Kyu Lee 47~53 3
10 The Mixmaster Model as a Cosmological Framework and Aspects of its Quantum Dynamics Giovanni Imponente 54~72 2
11 Large Scale Wave Dynamics of Interstellar Medium in Galactic Magnetic Fields Sergey Bastrukov 73~77 1
12 Brane Inflation in String Theories Jin Young Kim 78~87 4
13 Fluorescent Ultraviolet Spectra of Molecular Hydrogen in Star Forming Clouds 박수종 88~93 4
14 Gravitational Radiation from Time Dependent Wormhole 김성원 94~98 8
15 On the Dyadosphere of Black Holes Giuliano Preparata 99~104 15
16 Cosmology with the CFT-Radiation Matter Yun Soo Myung 105~110 2
17 Comparison of Quantum Nature in InAs/GaAs Quantum Dots 장유동 111~113 9
18 A Study of Optical Properties of InGaAs/GaAs Quantum Dots Gwo-Jen Jan 114~119 2
19 Photoluminescence Study of Micro-Patterned Si/Ge/Si Single Quantum Wells 석호 최 120~123 1
20 Determination of Carrier Concentration in Ga1-xMnxAs Using Raman Spectrocopy 명제 성 124~128 0
21 Characteristics of Nitride-Based Laser Diode Grown on SiO2-Removed Laterally Overgrown GaN 윤호 최 129~133 3
22 Functionalized One-Dimensional Devices and Their Interconnections 국양 134~136 0
23 Band Gap Modulation of a Carbon Nanotube by Hydrogen Functionalization 이영희 137~142 16
24 Nonlinear Optical Properties of Cadmium Telluride Semiconductor Nanocrystals for Optical Power-Limiting Application 재태 서 143~148 16
25 Structural Characterization of ZnO Thin Film Grown on Si-Based Substrates by Metal Organic Chemical Vapor Deposition 현우 김 149~152 6
26 Electrical Characteristics of AlxGa1-xN/GaN Heterostructure withIsoelectronic Al-Doped Channel for HFET Application 이정희 153~156 2
27 Generation of Coherent Optical Phonons in ZnO Using Femtosecond Lasers 김대식 157~160 11
28 Growth and Impurity Study of GaN Single Crystal Grown by Na Flux 세영 장 161~164 5
29 Spectral Response Change in a Quantum Well Infrared Photodetector by Using Quantum Well Intermixing 최원준 165~168 3
30 Femto-second Photo-Reflectance Spectroscopy of Energy Relaxation Processin GaAs/AlGaAs Mesoscopic Disks N Suzumura 169~172 0
31 Study of Ni-Silicide-Mediated Crystallization of a-Si by Spectroscopic Ellipsometry 영동 김 173~175 18
32 Low Parasitic Resistance Process in Low-Temperature PolycrystallineThin Film Transistors Using Ni-Silicide 진장 176~178 0
33 Observation of Field-Induced Electron Emission in Porous PolycrystallineSilicon Nano-Structured Diode 주원 이 179~183 3
34 E ect of Etching and Aging Conditions on the Structural, Chemical andOptical Characteristics of Porous Silicon 남희 조 184~188 2
35 Extraction of Schottky Barrier Height in Highly Boron Doped Small SizeMetal-Silicon Contact 문규 장 189~194 4
36 Prediction of the Critical Dimensions by Using a Threshold Energy Resist Model Ji-YongYoo 191~195 2
37 Performance of Magnetic Tunnel Junctions Prepared by Combined Naturaland Remote Oxidation Methods for The Application of Magnetic RandomAccess Memory 진표 홍 195~198 7
38 Characteristics of Platinum Films Etched with a SF6/Ar Plasma Sang Hoon Kim 196~199 8
39 Direct Electron-Beam Writing with High Aspect Ratio for FabricatingIon-Beam Lithography Mask 조용훈 199~201 0
40 Design of Bluetooth Baseband Controller Using FPGA SunheeKim 200~205 2
41 Resist Pattern Collapse Modeling for Smaller Features 형주 이 202~206 6
42 Highly Stable and Manufacturable Body-Tied SOI Technology for High Speed and Low Power CMOS Devices Young-WugKim 206~209 4
43 Investigation of The Nano-structure and Optical Features of nc-Si Films Grown by RF Magnetron Sputter Techniques 남희 조 207~211 3
44 Matching Characteristics by Forward VB Effects of SOI MOSFETs for RF-Analog Applications HyeokjaeLee 210~213 0
45 Self-pulsations in a Multi-section Distributed Feedback Laser Diode 대수 이 212~215 1
46 A Physics-Based Continuous Charge-Sheet MOSFET Model Using a Balanced Bulk-Charge-Sharing Method S.D.Cho 214~223 2
47 Growth of ZnO Nanowires by Electrochemical Deposition into Porous Alumina on Silicon Substrates Sh.U. Yuldashev 216~218 16
48 Photoluminescence Properties of a Self-Doped GaN Layer Grown on Si Substrate 경화 김 219~221 1
49 Structural and Cathodoluminescence Properties of Gallium Nitride Nanorods by HVPE 화목 김 222~225 4
50 Extraction of Substrate Resistances of RF MOSFETs with Various Geometries Han Jeonghu 224~228 1
51 Investigation of Near-Field and Far-Field Distribution for Design Optimization of a 4  4 InGaAs/GaAs Vertical-Cavity Surface-Emitting Laser Array 일항 이 226~229 0
52 Formation of a Shallow Junction by Using the Spin-Coating Solid-Phase Diffusion Method for Sub-Micron SOI MOSFETs KijuIm 229~232 5
53 0.5 W PA MMIC Module Using InGaP/GaAs HBTs for IMT-2000 Handset Operational at 3.3 V 성일 김 230~233 4
54 Nano-Scale SONOS Memory with a Double-Gate MOSFET Structure 조일환 233~236 15
55 Fabrication and Characteristics of Multi-Finger InGaP/GaAs Power HBTs for High Power Microwave Applications 종민 이 234~237 9
56 Growth of Room-Temperature 1.32- m-Emitting InAs Quantum Dots Using fGaAs/InAsg Quasi-Monolayers 김종수 237~240 1
57 Study of the Dielectric Function of ZnS by Spectroscopic Ellipsometry T. H. Ghong 238~241 11
58 CMOS Implementation of a 2.4-GHz Switch Mixer and Quadrature VCO JoonhoGil 241~245 3
59 Optical Properties of InGaAs Alloy Films in the E2 Region by Spectroscopic Ellipsometry 영동 김 242~245 6
60 A Ring & Counter Controlled Delay Line for a Wide Operation Range and Low-Jitter Performance Woo-SeopKim 246~250 1
61 Molecular Beam Epitaxial Growth of InAs Quantum Dots on (100) InAlAs/InP Emitting at Near Infrared Wavelength 본흔 구 246~249 9
62 Growth of -Ga2O3 Nanowires with Straight and Bent Shapes by Simple Evaporation without Catalyst Young Heon Kim 250~253 0
63 A 2.4-GHz CMOS LNA with Harmonic Cancellation and Current Reuse Technique 권익진 251~254 2
64 Morphology and Structure of Nano-Sized In2O3 Crystals Synthesized by Wet Reaction 종석 정 254~257 2
65 Combining Transistor Sizing, Wire Sizing, and Buffer Insertion for Low Power in CMOS Digital Circuit Design HyungwooLee 255~260 1
66 Magnetoresistance and Magnetic Behaviors of the Oxide-Diluted Magnetic Semiconductor Zn1-xCoxO Thin Films 재현 김 258~262 16
67 Estimate of Signal Delay at Multi-Level Interconnects by Using a Layout-Fracturing Algorithm SukinYoon 261~266 2
68 Temperature Dependence of Spin-Resolved Subband Structures in a Selectively Mn-Doped III-V Semiconductor Quantum Well 김혜정 263~266 4
69 Characteristics of Zirconium-Silicate Films Prepared by Using Different Co-Sputtering Methods ChangbaeJeon 267~271 7
70 Adsorption of H2O Molecules at the Open Ends of Singlewalled Carbon Nanotubes 용규 황 267~271 12
71 Characterization of Ultra-Thin HfO2 Gate Oxide Prepared by Using Atomic Layer Deposition TaehoLee 272~275 22
72 Generation of Ultrafast Electrical Pulses on Semiconductor Photoconductive Switches 신호 조 272~275 1
73 DC and RF Performance Characterization of a 0.2-㎛ T-Gate GaN/AlGaN Heterostructure Field-Effect Transistors with n+-AlGaN Cap Layers S.J.Kim 276~280 0
74 Lithography Process Optimization Simulator for an Illumination System 미애 하 276~279 6
75 A Practical Method of Extracting the Photoresist Exposure Parameters by Using a Dose-to-Clear Swing Curve 형희 김 280~284 2
76 Effect of Selective Hydrogen Pretreatment on the Characteristics of AlGaAs/InGaAs p-HEMTs I.-H.Kang 281~284 6
77 Structural Characterization of InGaN/GaN Multi-Quantum Well Structures Using High-Resolution XRD 김영훈 285~288 16
78 Effect of Base Structure on the Device Characteristics of SiGe HBTs Fabricated by Reduced-Pressure Chemical Vapor Deposition 서동우 285~287 2
79 Frequency Dependence of the Dynamic Pyroelectric Properties of Pb1-xLaxTi1-x/4O3 (PLT) Ferroelectric Thin Films with Various La Concentrations DaeEunCha 288~293 2
80 Photoionization Cross Section of Hydrogenic Impurities in Cylindrical Quantum Wires: In nite Well Model Heon Ham 289~292 1
81 High-Power 0.81 m Tensile Strained GaAsP/InGaP Diode Lasers 철회 김 293~296 0
82 Frequency-Dependent Electrical Properties of Organic Light-Emitting Diodes YongSooLee 294~297 12
83 Electron Transport Characteristics of Sub-100 Nanometer GaAs MESFETs 재헌 한 297~301 0
84 Experimental Study on Gate Length Scaling of Sub-100 Nanometer AlGaAs/GaAs MODFETs 재헌 한 302~307 0
85 A Study on Thermal Annealing E ects of ZnSe/GaAs Epilayer 창선 박 308~312 0
86 Thermal Treatment of InGaAs/GaAs Self-Assembled Quantum Dots With SiNx and SiO2 Capping Layers J. H. Lee 313~315 8
87 Rapid Thermal Annealing E ect on Charge Storage Characteristics in MOS Capacitor with Ge Nanocrystals Jae Kwon Kim 316~319 0
88 Fabrication and Optical Properties of Silicon Nano-dots by Pulsed Laser Deposition 상협 김 320~324 0
89 Continuous Wave Optical Properties in dc-Biased Nanostructure Semiconductors Driven by a THz-Field Koo-Chul Je 325~328 2
90 Photoluminescence Resonance Properties of Porous Silicon Microcavity 영유 김 329~332 4
91 Characteristics of Zn1 -xMnxO Thin Films Prepared by RF Magnetron Sputtering 두수 김 333~335 8
92 Fabrication and Characterization of Silicon-Based Photodiode for Detection of Luminol Chemiluminescence in a Biosensor Hyung-Il Kim 336~339 4
93 Spin-Polarization Dependences of Longitudinal Susceptibility Functions in a Spin-Polarized Electron Gas J. S. Kim 340~344 0
94 The Post-Annealing E ects of GaN Epilayer Grown on N+-Ion-Implanted Sapphire Substrate Junggeun Jhin 345~348 1
95 Characteristics of a GaN Thick Film on Si(111) Grown by Hydride Vapor Phase Epitaxy Using an AlN Bu er Layer 현재 이 349~351 1
96 Fabrication of Up-converter MMICs' and Their Modules for the Application of 60 GHz Mobile Broadband System 경호 이 352~356 0
97 Spatially Resolved Study of Luminescent and Electrical Properties of ZnO/GaAs Structures G. N. Panin 357~360 0
98 Charging E ects in Amorphous Silicon Quantum Dots Embedded in Silicon Nitride 래만 박 361~366 0
99 Enhanced I-V Characteristics in InGaN/GaN Multi-Quantum-Well Light-Emitting Diode with an n-type Interface Layer C. S. Kim 367~370 2
100 Pattern Collapse for Nanoline Formation 상곤 김 371~375 3
101 Wet Process Encapsulation for Longevity of Organic Light-Emitting Devices 기현 김 376~378 1
102 Performance Improvements of Quantum-Wire Lasers Through the Ground State Operation 태근 김 379~382 2
103 Optical Characteristics of InGaNAs Quantum Wells Grown by MOCVD 남제 김 383~385 0
104 Fabrication and DC Characteristics of InP/InGaAs HBTs Optimally Designed for Integration with HPTs 정근 송 386~389 2
105 Nano-Scaled Linear Pore Arrays on Anodic Aluminum Oxide Template 수진 이 390~392 1
106 Narrow Photoluminescence from 1.3 m InAs/GaAs Quantum Dots 동한 이 393~394 0
107 MnAs Growth in Molecular Beam Epitaxy and its Magnetic Properties 김도진 395~398 3
108 GaMnN Thin Films Grown on Sapphire and GaAs Substrates Using Single GaN Precursor Via Molecular Beam Epitaxy 김도진 399~402 6
109 A Study on Growth Characteristics of GaN Layers Grown by MOCVD on Si (111) Substrate 신희연 403~407 11
110 Ni in-Di used LiNbO3 Integrated Optic Devices with an UV-Curable Polymer Bu er Layer 운조 정 408~411 0
111 CuPt-Type Ordering and Ordered Domains in CdxZn1 on ZnTe Bu er Layers 호성 이 412~415 0
112 Control of Surface Morphology and Crystal Quality of Lateral Epitaxial Overgrown GaN Films Employing Two-Step Growth H. S. Cheong 416~420 3
113 Global Planarization Characteristics of Shallow Trench Isolation-Chemical Mechanical Polishing Process with and without Reverse Moat Etch Step 서용진 421~424 13
114 Application of Pentacene OTFTs with SiNx Gate to LCD Display 정근 송 425~427 8
115 A Large Grain Pentacene by Vapour Phase Deposition Ji Sim Jung 428~430 11
116 Characteristics of InGaN/GaN Multi-Quantum-Well Light-Emitting Diodes with Various Growth Temperatures of p-GaN Layers C. S. Kim 431~433 5
117 Power and DC Characteristics of 0.2 ㎛ Double Pulse Doped In0:52Al0:48As/In0:53Ga0:47As Metamorphic HEMTs Hyung Sub Yoon 434~437 1
118 Indium Doping E ects on GaN Epilayers Grown by Metal-Organic Chemical Vapor Deposition H. S. Yoon 438~440 0
119 Spectroscopic Ellipsometric Properties of Ga1-xFexAs Dilute MagneticSemiconductors 호선 이 441~445 4
120 The E ects of H2/N2 Mixed Gas-Plasma Pretreatment of Sapphire (0001)Surface on the Characteristics of GaN Epilayers 용주 박 446~449 0
121 Characterization for Crystallization of SrBi2Nb2O9 Thin Films on Si Substrates 동철 유 450~453 1
122 Transport Properties in Samples Containing InAs Self-Assembled Dots and Dashes 길호 김 454~457 1
123 E ects of the Thickness of Dielectric Capping Layer and the Distance of Quantum Wells from the Sample Surface on the Intermixing of In0:2Ga0:8As/GaAs Multiple Quantum Well Structures by Impurity-Free Vacancy Disordering 용탁 이 458~461 0
124 Crystallization Temperature Dependence of Electrical Conductivity on SMC Poly-Si Kyung Ho Kim 462~465 0
125 Investigation of Micro-structural Change Using Raman Spectroscopy During Ni Silicide Mediated Crystallization of Amorphous Silicon Seong Jin Park 466~471 4
126 Optical Metastabiltiy in Mg-Doped GaN Grown by Metalorganic Chemical Vapor Depostion 서은경 472~475 1
127 Growth of InAs Quantum Dot without Introducing Wetting Layer by Alternate Deposition of InAs and GaAs with Quasi-monolayer 종수 김 476~479 7
128 Device Characteristics of Radio Frequency SAW Filter Fabricated on GaN Thin Film 용현 이 480~482 3
129 Optical Properties of Wetting Layer in InAs Quantum Dots at Di erent Growth Temperatures 종수 김 483~486 5
130 Device Performance of 0.15 m AlGaAs/GaAs PHEMT Recessed by ECR Plasma System 재엽 심 487~491 0
131 Enhanced Heat Dissipation Using Flip-Chip Geometry in InGaN Laser Diodes 재희 조 492~494 2
132 Geometry and Core-level Shifts of Li/GaAs(110) Surface 홍석 이 495~498 4
133 New III-V-based Magnetic Semiconductors and Quantum Nanostructures H Asahi 499~503 2
134 Structural and Optical Properties of Trapezoid InGaN/GaN Multiple Quantum Wells in the Active Layer of Light Emitting Diodes 서은경 504~507 0
135 A Study on Oxidation Behavior of Poly-Si1-xGex Films 강한별 508~513 1
136 Influence of Ga Source on Nitrogen Incorporation of Ga(In)AsN/GaAs Quantum Wells Grown by Metalorganic Chemical Vapor Deposition T. V. Cuong 514~517 1
137 Current Gain Improvement of InGaP/GaAs HBT by a Newly Developed Emitter Ledge Process 민병규 518~521 6
138 Fabrication of 3-Dimensional Cu Coplanar Waveguide Using Porous SiliconMEMS Technology 재우 권 522~525 2
139 The Promise and Challenge of the Practical Application of Quantum-dot Nanostructures in Optoelectronics Elias Towe 526~530 0
140 The E ect of Mn on Self-assembled CdSe/ZnSe Quantum Dots 상훈 이 531~534 0
141 Recent Advances in III-Nitride Ultraviolet Photonic Materials and Devices H. X. Jiang 535~541 1
142 Characterization of Cu-doped PPy Based Dopamine Sensor on n-type Silicon Substrate Jung-Hoon Yang 542~546 3
143 Formation of V-Shaped Pits in Nitride Films Grown by Metalorganic Chemical Vapor Deposition 형균 조 547~550 2
144 n-Type Organic Thin-Film Transistors with Self-Assembled Monolayers 성현 김 551~554 4
145 A View of Nanoscale Electronic Devices Hadis Morkoc 555~573 3
146 A Flip Chip Packaged Limiting Ampli er With Data Rate of 10 Gb/s 철원 주 574~578 1
147 Ferromagnetic III-Mn-V Semiconductors: Manipulation of Magnetic Properties by Annealing, Extrinsic Doping, and Multilayer Design J. K. Furdyna 579~590 15
148 Fabrication and Lasing Characteristics of Tunable Integrated-Twin-Guide Distributed Bragg Reflector Laser Diode and Butt Coupled Distributed Bragg Reflector Laser Diode 수환 오 591~596 7
149 Growth and Temperature Dependence of The Photocurrent Spectra for HgCdTe Epilatyers Seungnam Baek 597~601 0
150 Atomic Structure of B-P and Self-Interstitial-B-P Complexes in Si 장기주 602~605 0
151 Application of Nano-Cluster Ion Beam to Surface Smoothening, Etching, andUltra-Shallow Junction Formation 최원국 606~610 5
152 GaN Pyramids Prepared by Photo-Assisted Chemical Etching 강태원 611~613 1
153 Organic Transistors Using Polymeric Gate Dielectrics 성현 김 614~617 13
154 Photoluminescence of C60 Aggregates in Solvent Mixtures Jeung Sun Ahn 618~621 3
155 Optical Characteristics of the AlGaN/GaN/AlGaN Waveguide Grown on (111) Si Substrate H. Kim 622~624 0
156 Two-step Growth of GaN Films Grown on Si (111) Substrate by Using SiC Intermediate Layer 임기영 625~628 2
157 Synthesis of Silicon Nanocrystals 수진 이 629~632 2
158 Carrier Lifetime Reduction in a p-i GaAs/AlGaAs Asymmetric Triple Quantum Well Structure K. Mizutani 633~636 2
159 High Power Quantum Cascade Lasers Operating at Room Temperature M. Razeghi 637~641 2
160 Analytic Model for Photo-Response of p-Channel MODFET'S Hwe-Jong Kim 642~646 0
161 Structure and Morphology of Vacuum-evaporated Pentacene as a Function of the Substrate Temperature 재원 장 647~651 17
162 Simple Model for 1/f Noise in Polycrystalline Silicon Thin-Film Transistors 정일 이 652~656 1
163 GaN Quantum Dots: Physics and Applications Le si Dang 657~661 12
164 Fabrication Technology and Device Performance of SiN Assisted 0.15 mGate In0:52Al0:48As/In0:53Ga0:47As Metamorphic HEMT on GaAs Substrate Jin Hee Lee, 662~665 2
165 Source and Drain Formation by Using Plasma Doping and Laser Melt Annealing Technique for Deca-Nanometer SOI MOSFETs 성렬 맹 666~670 3
166 The Structure And Optical Properties of n-Type And p-Type Porous Silicon 종무 이 671~675 4
167 Modeling and Simulation for Electrostatically Driven Micro-Electro-Mechanical (MEMS) System 태선 하 676~680 2
168 Characterization of Interface Traps in MOS Devices Using Photonic Illumination Method 영욱 이 681~684 5
169 E ect of Mechanical Stress on the Performance of an a-Si:H TFT on Plastic Substrate Sung Hwan Won 685~687 1
170 Photoionization Cross Section of Hydrogenic Impurities in SphericalQuantum Dots: In nite Well Model Heon Ham 688~692 0
171 Comparision of Nano-Porous Silicon Prepared by Photoelectrochemical Etching in HF-Ethanol and HF-Acetonitrile Solutions Chul-Goo Kang 693~697 17
172 Scanning Probe Microscope Studies of Ge Nanocrystals Grown on SiO2/Si 석현 방 698~701 0
173 Removal Effciency of Organic Contaminants Using ECR H2 Plasma And ECR O2 Plasma Kyunsuk Choi 702~707 1
174 Atomistic Study of Double-Wall Copper Nanotubes 정원 강 708~712 5
175 Nano-Layer Structure of Silicon-on-Insulator Materials X Wang 713~718 0
176 UV Photoconductivity of Lateral p+-PSi-n+ Diode Chul-Goo Kang 719~723 0
177 Ferromagnetic Properties of Chalcopyrite (Zn1-xMNx) GeP2 Semiconductors 성래 조 724~726 10
178 Electron Microscopy Investigation at the Initial Growth Stage of Carbon Nanotubes Sung-Jin Eum 727~731 1
179 The Selective Growth of Carbon Nanotubes on Hole-Pattern by Thermal Chemical Vapor Deposition 윤허 732~734 3
180 Fabrication of Amperometric Urea Sensor Based on Nano-Porous Silicon Technology 준형 진 735~738 15
181 Mn-doped ZnGeAs2 and ZnSnAs2 Single Crystals: Growth and Electrical and Magnetic Properties Sungyoul Choi 739~741 26
182 Polarization-dependent Photore Quantum Well Structure G. J. Jan 742~745 0
183 Photoluminescence of InGaAsN/GaAs Single Quantum Well Grown by Metal-organic Chemical Vapor Deposition G. J. Jan 746~749 0
184 Infrared Reflectance in GaN/AlGaN Triangular Stripes Grown on Si(111) Substrates by MOVPE M. Mizushima 750~752 0
185 Design of High Brightness Cubic-GaN LEDs Grown on GaAs Substrate Yuanping Sun 753~756 2
186 Advances in III-Nitride Microstructures and Micro-Size Emitters H. X. Jiang 757~764 4
187 Breakdown Characteristics of a Zener Diode with n+p+n-p+ Structure 상구 정 765~767 2
188 Photonic Crystal Nanocavities for E cient Light Con nement and Emission Axel Scherer, 768~773 0
189 Atmospheric Pressure Plasma Research Activity in Korea Han S. Uhm 775~781 10
190 Characteristics of Breakdown Voltage at a Narrow Gap in a Non-thermal Plasma Flow Takehiko SATO 782~786 6
191 Ablation of irradiated metals by high-intensity pulsed ion beam X. P. Zhu 787~790 2
192 Etching characteristics of Au thin films using inductively Inductively Coupled Cl2/ArPlasma Chang il Kim 791~794 1
193 High rate sapphire etching using BCl3-based inductively coupled plasma 김동우 795~799 9
194 Effect of N-based Gases to C3F8/O2 on Global Warming during Silicon Nitride PECVD Chamber Cleaning Using a Remote Plasma Source Ji Hwang Kim 800~803 10
195 Effects of Additive Gases on Ag Etching using Inductively Coupled Cl2-based Plasmas Sang Duk Park 804~808 3
196 The etching mechanism of (Zr0.8Sn0.2)TiO4 (ZST) film K.-H. Kwon 809~813 0
197 ICP Etching of Pt Thin Films for Fabrication of SAW Devices Taek-Joo Lee 814~818 8
198 Etch Characteristics of BCB Film Using Inductively Coupled Plasma Pil-Seung Kang 819~823 1
199 ETCHING PROPERTIES of BLT FILMS D. P. Kim 824~828 0
200 The effect of CF4 addition on Ru etching with inductively coupled plasma Kyu-Tae Lim 829~832 3
201 Self-Erasing Discharge Using Ramped-Square Sustain Waveform Joon-Yub Kim 833~837 0
202 Surface Treatment Effect of Fluorinated Amorphous Carbon Gwon-Sarm Kang 838~843 0
203 Improvement of Plasma Discharge Characteristic in Blue Cells Hyun Ju Seo 844~847 0
204 The improvement of luminous efficiency through the addition of a asmall amount of Kr gas into the conventional He - Ne - Xe gas Tae-Won Kim 848~855 0
205 Finite Ion Mass Effect on Heating Mechanism in Helicon Wave Discharges B. H. Park 856~858 1
206 The Effect of Inertial Terms in the Momentum Equation in Fluid Simulation of High Density Plasma Discharge H.H. Choe 859~866 9
207 Determination of Plasma Potential from The Langmuir Probe Trace Using Bi-Orthogonal Wavelet Transform Bong-Kyoung Park 867~872 5
208 Effects of direct-current bias on the plasma potential J.H. PYO 873~875 0
209 Simple Microwave Plasma Source at Atmospheric Pressure Jeong Hoon Kim 876~879 41
210 Underwater Discharge and Cell Destruction by Shockwaves Han Y. Lee 880~884 19
211 Diagnostics of ablation plasma induced by high intensity pulsed ion beam using temporally resolved emission spectroscopy jialiang Zhang 885~879 1
212 Investigation on Crystalline Behavior of Polymerized Products in p-Xylene Plasma xiao guang Guo 890~892 2
213 Numerical computation on the generation of CH3 and H radicals by the thermal plasma decomposition of hydrocarbons Keun Su Kim 893~899 2
214 A Diode Design Study of the Virtual Cathode Oscillator with an IntenseRelativistic Electron Beam Kew Yong Sung 900~903 10
215 Emissions of High Speed Plasma in a Plasma Focus DeviceN Hoon Heo Hong 904~907 0
216 Numerical Analysis of Gas Discharge Using FEM-FCT on Unstructured Gride8 Woong-Kee Min 908~915 1
217 Measurements of Plasma Parameters in Low-Frequency (60 Hz) Hydrogen Discharge Hong Tak Kim 916~919 24
218 Numerical Simulation of a Pulsed Corona Discharge Plasma Wook Hee Koh 920~924 5
219 Soft X-ray sources with a narrow spectral bandwidth I. W. Choi 925~929 0
220 Simulation of Plasma Gas Properties in an Explosively-Driven Magnetohydrodynamic Generator 김덕규 930~933 2
221 Optical and Dielectric Properties of a-C:F,H Films Cheng Schanhua 934~937 0
222 A Study of Penning gas for the improvement of the luminance and the luminous efficiency in AC plasma display panel Seung-Joon Lee 938~942 7
223 Influence of hydrogen on a-SiC:H films deposited by RF PECVD D. H. Yoon 943~946 0
224 Optical Characterization of Silica Based Waveguide Prepared by PlasmaEnhanced Chemical Vapor Depositions_type= Sung Min Cho 947~951 0
225 Mechanical Properties of Low-k a-C:F films by Inductively Coupled Plasma Chemical Vapor Deposition Ho Jeong Ko 952~955 1
226 Dependence of the physical properties DLC films Jae Bun Kim 956~960 1
227 E ects of N+2 Ion Irradiation during AlN Film Growth byDual Ion-Beam Deposition sang hun Jeong 961~965 0
228 Application of a Plasma-Catalytic System for Decomposition of Volatile Organic Compounds Vladimir Demidiouk 966~970 13
229 Characteristic of the Relativistic Electron Beam Diode and Vircator Systemby High Injection Current Myung C. Choi 971~974 5
230 Plasma Enhanced Atomic Layer Deposition of Al2O3 and TiN Seung-Woo Choi 975~979 18
231 Fabrication and Characteristics of hydrogenated amorphous carbon films by low frequency PECVD method with methane plasma 이성호 980~984 7
232 Conduction Mechanism of the Bamboo-Shaped Multiwalled Carbon Nanotubes H. S. Kim 985~988 7
233 Infuence of Gas Temperature on Electrical Breakdown in Cylindrical Electrodes Han S. Uhm 989~993 0
234 Multistability and Chaos in a Plasma Diode 한상준 994~999 5
235 Head Effect of Modulated-Electron Beam on Cavity Excitation in Klystrode 김형석 1000~1008 3

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