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Dielectric functions as a continuous function of temperature are useful for nondestructive in-situ monitoring of deposition and device design. Here, we present an analytic expression that accurately represents the dielectric function ε = ε<SUB>1</SUB> + <i>i</i>ε<SUB>2</SUB> of InAs from 0.74 to 6.54 eV for temperatures from 22 to 675 K. We use the parametric model, which is known to accurately portray ε without unphysical assumptions. The parameters are obtained from ε spectra obtained on an InAs substrate by spectroscopic ellipsometry. The dielectric function is parameterized successfully by seven Gaussian-broadened polynomials.