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Ultrathin doped layers, known as delta-doped layers, were introduced within the intrinsic a-Si active layer to fabricate hydrogenated amorphous silicon (a-Si:H) thin-film transistors (TFTs) with enhanced field-effect mobility. The performance of the delta-doped a-Si:H TFTs were dependant on PH3 flow rate and the distance from n+ a-Si to the delta-doping layer. The delta-doped a-Si:H TFTs fabricated using the commercial manufacturing process exhibited an enhanced field-effect mobility of approximately ~0.23 cm2/Vs (compared to a conventional a-Si:H TFT with 0.15 cm2/Vs) and desirable stability under a bias-temperature stress test.