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In this paper, we analyze redistribution of dopant in δ-doped are during overgrowth of the layer. New explanation of asymmetrization of δ-dopant distribution is presented. The explanation was based on model with some inhomogeneous parameters. The inhomogeneities of parameters are native effects of the considered technological process and inhomogeneity of the doped heterostructure. We calculated spatial distribution of Mn concentration in δ-doped area in heterostructure GaAs/InGaAs/GaAs for overlayer GaAs and estimated spreading of the δ-layer as a function of temperature of overgrowth and depth of the overlayer.