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We have investigated the effects of pulsed plasma on the low temperature (380 C) growth of Pb-based ferroelectric films using direct liquid injection metalorganic chemical vapor deposition (DLI-MOCVD). With an appropriately tuned pulsed plasma, stoichiometric lead titanate (PT) films having pure perovskite phases could be obtained over a wider range of metalorganic precursor input flow rate ratio. The processing window for the fabrication of stoichiometric lead zirconate titanate (PZT) films was also expanded with the assistance of the pulsed plasma. The step coverage characteristic was not degraded by the application of the pulsed plasma.