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A fully integrable InP/InGaAs HPT with an ITO emitter contact was first fabricated by employing a SiO2 passivation layer. The electrical and the optical characteristics of the HPT with a passivation layer were measured and compared with those of the HPT without a passivation layer. The only noticeable difference was the increased emitter series resistance of the HPT with a passivation layer. AES analysis was performed to explain the reason of the increased emitter series resistance. Results show that PECVD SiO2 deposition and annealing processes cause the diffusion of oxygen to the interface and the depletion of tin at the interface, which may be responsible for the increase of the series resistance.