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ZnO is a promising material to make high efficient ultraviolet(UV) or blue light emitting diodes (LEDs) because of its large binding energy and energy bandgap. In this study, we prepared ZnO thin films with p-type conductivity on silicon(100) substrates by RF magnetron sputtering in the mixture of N2 and O2. The process was accompanied by low pressure in-situ annealing in O2 at 600 °C and 800 °C respectively. Hall effect in Van der Pauw configuration showed that the N-doped ZnO film annealed at 800 °C has p-type conductivity. Photoluminescence(PL) spectrum of the film annealed at 800 °C showed UV emission related to exciton and bound to donor-acceptor pair(DAP) as well as visible emission related to many intrinsic defects.