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We have evaluated the effects of the background doping concentration (BDC) on electrostatic discharge (ESD) protection by using an extended drain N-type metal oxide semiconductor (EDNMOS) field effect transistor device operating at high voltage. The EDNMOS device with low BDC suffers from strong snapback in the high current region, which results in poor ESD protection and high latchup risk. However, the strong snapback can be avoided in the EDNMOS device with high BDC. This implies that both good ESD protection and latchup immunity can be realized in terms of the EDNMOS by properly controlling its BDC. As a result of transmission line pulse (TLP) test, an ESD current immunity level of 5.08 mA/um and a good linear scaling behavior were achieved for a multi-finger-type device.


We have evaluated the effects of the background doping concentration (BDC) on electrostatic discharge (ESD) protection by using an extended drain N-type metal oxide semiconductor (EDNMOS) field effect transistor device operating at high voltage. The EDNMOS device with low BDC suffers from strong snapback in the high current region, which results in poor ESD protection and high latchup risk. However, the strong snapback can be avoided in the EDNMOS device with high BDC. This implies that both good ESD protection and latchup immunity can be realized in terms of the EDNMOS by properly controlling its BDC. As a result of transmission line pulse (TLP) test, an ESD current immunity level of 5.08 mA/um and a good linear scaling behavior were achieved for a multi-finger-type device.