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The photoluminescence (PL) spectra at several temperatures of self-assembled CdTe/ZnTe quantum wires (QWRs) grown by using molecular-beam epitaxy and atomic layer epitaxy showed that the PL peaks corresponding to the interband transitions from the ground electronic subband to the ground heavy-hole band (E$_1$-HH$_1$) shifted to lower energy with increasing temperature. The electronic subband energies were calculated by using a variable-sized meshing finite difference method (FDM). The experimental (E$_1$-HH$_1$) transitions calculated by using the FDM taking into account strain effects are in reasonable agreement with the calculated (E$_1$-HH$_1$) transitions. The present results could help improve understanding of the electronic properties of the CdTe/ZnTe QWRs.