초록 close

The effects of post-annealing of high-k HfO2 thin films grown by atomic layer deposition method were investigated by the annealing treatments of 400-600oC. Pt/HfO2/p-Si MOS capacitor structures were fabricated, and then the capacitance-voltage and current-voltage characteristics were measured to analyze the electrical characteristics of dielectric layers. The X-ray diffraction analyses revealed that the 500oC-annealed HfO2 film remained to be amorphous, and the 600oC-annealed HfO2 film was crystallized. The annealing treatment at 500oC resulted in the highest capacitance and the lowest leakage current due to the reduction of defects in the HfO2 films and non-crystallization. Our results suggest that post-annealing treatments are a critical factor in improving the characteristics of gate dielectric layer.