초록 close

- Yttrium(Y)-substituted bismuth titanate (Bi4-xYx)Ti3O12 [x=0, 0.25, 0.5, 0.75, 1] (BYT)thin films were deposited using an RF sputtering method on the Pt/TiO2/SiO2/Si substrates. The structural properties and electrical properties of yttrium-substituted (Bi4-xYx)Ti3O12 thin films were analyzed. The remanent polarization of (Bi4-xYx)Ti3O12 films increased with increasing Y-content. The (Bi3.25Y0.75)Ti3O12 films fabricated using a top Au electrode showed saturated polarization-electric field (P-E) switching curves with a remanent polarization (Pr) of 8 μC/cm2 and coercive field (Ec) of 53 3.25Y0.75)Ti3O12 films exhibited fatigue-free behavior up to 4.51011 read/write switching cycles at a frequency of 1MHz.