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An application of an arc plasma source with a low anode erosion rate allowing it to generate a nearly spectrally clean plasma flow at a lifetime of 10$^3$ $\sim$ 10$^4$ hours is proposed as a tool for plasma-chemical surface treatment. As an example, an etching process for mono-crystal silicon in a CF$_4$ plasma and for a photo-resist (PR) on a silicon wafer in an air plasma at pressures about 10$^0$ mbar were demonstrated. A macroprobe current was used as an indicator of the generated plasma activity. The dependences of the mentioned current and PR etch rate on the processing conditions are discussed and can help to assess the optimal conditions for the etching process before the wafer etching experiment.


An application of an arc plasma source with a low anode erosion rate allowing it to generate a nearly spectrally clean plasma flow at a lifetime of 10$^3$ $\sim$ 10$^4$ hours is proposed as a tool for plasma-chemical surface treatment. As an example, an etching process for mono-crystal silicon in a CF$_4$ plasma and for a photo-resist (PR) on a silicon wafer in an air plasma at pressures about 10$^0$ mbar were demonstrated. A macroprobe current was used as an indicator of the generated plasma activity. The dependences of the mentioned current and PR etch rate on the processing conditions are discussed and can help to assess the optimal conditions for the etching process before the wafer etching experiment.