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We have investigated the illumination intensity and the spectral dependence of the hole capacitance of hydrogenated amorphous silicon (a-Si:H) in a metal-insulator-semiconductor capacitor (MIS-C). The hole capacitance had a strong dependence on the illumination intensity and showed spectral behaviors similar to those of the conventional optical absorption spectra of a-Si:H films. These results could be explained through the defect-mediated generation-recombination model which was used to explain the frequency and the temperature dependence of the hole capacitances of a-Si:H MIS-C.