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We investigated the behavior of boron by varying the $^{49}$BF$_{2}^{+}$ ion-implantation energy and the rapid thermal annealing (RTA) temperature with the remaining oxide. The $^{49}$BF$_{2}^{+}$ ions were implanted into p-type Si (100) without removal of the native oxide. The used $^{49}$BF$% _{2}^{+}$ ion-implantation energies were 0.5 keV, 1 keV, 2.5 keV, 5 keV, and 10 keV. The dose was fixed at 5 $\times$ 10$^{15}$ atoms/cm$^{2}$. RTA was performed under a N$_{2}$ ambient (760 Torr) at 1000 $^\circ$C and 1050 $^\circ$% C for 10 s. In order to investigate the boron behavior with $^{49}$BF$% _{2}^{+}$ ion implantation, we measured the surface roughness R$_{rms}$, the junction depth Xj, the dose, the sheet resistance Rs, and the thickness of the silicon oxide layer by using atomic force microscopy (AFM), secondary ion mass spectrometry (SIMS), ellipsometry, 4-point probe without removal of the native oxide layer. By these results, Rs in as-implanted samples increased abruptly (from 174 $\Omega $/cm$^{2}$ to 1706 $\Omega $/cm$^{2}$ for $^{49}$BF$_{2}^{+}$ implantation energy 0.5 keV and 10 keV, respectively) when Xj increased (from 27 nm for 0.5 keV to 57 nm for 10 keV) because of inactive dopants. After RTA, Rs decreased (from 128 $\Omega $/cm$% ^{2}$ for 0.5 keV to 70 $\Omega $/cm$^{2}$ for 10 keV at 1050 $^\circ$C) when Xj increased (from 147 nm for 0.5 keV to 221 nm for 10 keV at 1050 $^\circ$C). The inactive borons in as-implanted samples become the electrical active dopants after RTA treatment.


We investigated the behavior of boron by varying the $^{49}$BF$_{2}^{+}$ ion-implantation energy and the rapid thermal annealing (RTA) temperature with the remaining oxide. The $^{49}$BF$_{2}^{+}$ ions were implanted into p-type Si (100) without removal of the native oxide. The used $^{49}$BF$% _{2}^{+}$ ion-implantation energies were 0.5 keV, 1 keV, 2.5 keV, 5 keV, and 10 keV. The dose was fixed at 5 $\times$ 10$^{15}$ atoms/cm$^{2}$. RTA was performed under a N$_{2}$ ambient (760 Torr) at 1000 $^\circ$C and 1050 $^\circ$% C for 10 s. In order to investigate the boron behavior with $^{49}$BF$% _{2}^{+}$ ion implantation, we measured the surface roughness R$_{rms}$, the junction depth Xj, the dose, the sheet resistance Rs, and the thickness of the silicon oxide layer by using atomic force microscopy (AFM), secondary ion mass spectrometry (SIMS), ellipsometry, 4-point probe without removal of the native oxide layer. By these results, Rs in as-implanted samples increased abruptly (from 174 $\Omega $/cm$^{2}$ to 1706 $\Omega $/cm$^{2}$ for $^{49}$BF$_{2}^{+}$ implantation energy 0.5 keV and 10 keV, respectively) when Xj increased (from 27 nm for 0.5 keV to 57 nm for 10 keV) because of inactive dopants. After RTA, Rs decreased (from 128 $\Omega $/cm$% ^{2}$ for 0.5 keV to 70 $\Omega $/cm$^{2}$ for 10 keV at 1050 $^\circ$C) when Xj increased (from 147 nm for 0.5 keV to 221 nm for 10 keV at 1050 $^\circ$C). The inactive borons in as-implanted samples become the electrical active dopants after RTA treatment.