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In order to fabricate high quality VO$_2$ thin films undergoing metal-insulator transition around 340 K, we have investigated their growth conditions on M-plane Al$_2$O$_3$ substrates by using pulsed laser deposition. VO$_2$ thin films have a large resistance variation of $\sim$10$^4$ with temperature. XRD data show the formation of VO$_2$, as well as several other phases of vanadium oxides. The vanadium of the surface morphologies with the growth conditions was examined using a scanning electron microscope. From the analysis, we deduce that isolated grains are formed for a high oxygen ambient at a high growth temperature. Also voids between isolated grains cause a very high resistance.


In order to fabricate high quality VO$_2$ thin films undergoing metal-insulator transition around 340 K, we have investigated their growth conditions on M-plane Al$_2$O$_3$ substrates by using pulsed laser deposition. VO$_2$ thin films have a large resistance variation of $\sim$10$^4$ with temperature. XRD data show the formation of VO$_2$, as well as several other phases of vanadium oxides. The vanadium of the surface morphologies with the growth conditions was examined using a scanning electron microscope. From the analysis, we deduce that isolated grains are formed for a high oxygen ambient at a high growth temperature. Also voids between isolated grains cause a very high resistance.