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Al-doped ZnO (AZO) and Ga-doped ZnO (GZO) thin films were sequentially deposited on polymer (polyethylene terephthalate: PET) substrates with ZnO buffer layers by using a radio-frequency (r.f.) magnetron sputtering technique, and the effects of the buffer layer thickness on the microstructure and the electrical and the optical properties of the GZO/AZO/ZnO multilayers films were investigated to develop transparent conductors for flexible display applications. The optimum buffer layer thickness with which the lowest resistivity of the GZO/AZO/ZnO films was obtained was determined to be 140nm. The carrier concentration, the carrier mobility and the electrical resistivity of the GZO film with a 150-nm-thick ZnO buffer layer were 6.8 $\times$ 10$^{20}$ cm$^{-3}$, 11.0 cm$^2$/Vs and 8.3 $\times$ 10$^{-4}$ $\Omega$cm, respectively. The transmittance of the GZO/AZO/ZnO films was found to be higher than 85 \% and to be nearly independent of the ZnO buffer layer thickness.


Al-doped ZnO (AZO) and Ga-doped ZnO (GZO) thin films were sequentially deposited on polymer (polyethylene terephthalate: PET) substrates with ZnO buffer layers by using a radio-frequency (r.f.) magnetron sputtering technique, and the effects of the buffer layer thickness on the microstructure and the electrical and the optical properties of the GZO/AZO/ZnO multilayers films were investigated to develop transparent conductors for flexible display applications. The optimum buffer layer thickness with which the lowest resistivity of the GZO/AZO/ZnO films was obtained was determined to be 140nm. The carrier concentration, the carrier mobility and the electrical resistivity of the GZO film with a 150-nm-thick ZnO buffer layer were 6.8 $\times$ 10$^{20}$ cm$^{-3}$, 11.0 cm$^2$/Vs and 8.3 $\times$ 10$^{-4}$ $\Omega$cm, respectively. The transmittance of the GZO/AZO/ZnO films was found to be higher than 85 \% and to be nearly independent of the ZnO buffer layer thickness.