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We have successfully fabricated an epitaxial Mn-doped p-type GaAs thin film on a GaAs(001) substrate by using molecular beam epitaxy at a substrate temperature of 500 $^\circ$C. For the Mn-doped GaAs thin film with a hole concentration of $n_p \approx 2.0 \times 10^{17}$ cm$^{-3}$, an abrupt first-order metal-insulator transition (MIT) is observed at room temperature. The temperature dependence of the resistivity does not show a structural phase transition up to 420 K. The MIT temperature is controlled by applying a voltage without external hole doping. The abrupt MIT is discussed, along with breakdown.


We have successfully fabricated an epitaxial Mn-doped p-type GaAs thin film on a GaAs(001) substrate by using molecular beam epitaxy at a substrate temperature of 500 $^\circ$C. For the Mn-doped GaAs thin film with a hole concentration of $n_p \approx 2.0 \times 10^{17}$ cm$^{-3}$, an abrupt first-order metal-insulator transition (MIT) is observed at room temperature. The temperature dependence of the resistivity does not show a structural phase transition up to 420 K. The MIT temperature is controlled by applying a voltage without external hole doping. The abrupt MIT is discussed, along with breakdown.