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The correlation of electrical properties with magnetic properties for the (Ga1xMn x)As epilayer was investigated. For electrical trans-port measurements, it was clearly observed that the electrical mobility is increased with decreasing temperatures for both the (Ga0.974-Mn 0.026)As/LT-GaAs epilayer and the LT-GaAs:Be epilayer. However, a dierent behavior was observed at the cryogenic temperatureregion. The electrical mobility of (Ga0.974Mn 0.026)As/LT-GaAs epilayer increases with decreasing temperature, while the mobility of LT-0.974Mn 0.026)As/LT-GaAsepilayer, the critical point is observed at 69 K, and this value is almost the same as theTC. This result indicates that the carrier transportin ferromagnetic (Ga1. xMn x)As epilayers might be related to a spin-ordering eect because the spins will be arranged with the samedirection below theTCdrop below theTC in the temperature-dependent resistivity curve is expected to be a result of the spin-ordering eect in the ferromagnetic(Ga0.974Mn 0.026)As/LT-GaAs epilayer.