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Metaloxidesemiconductor structures (MOS) with the embedded Co nanoparticles (NPs) were eciently fabricated by utilizing anexternal laser irradiation technique for the application of nonvolatile memory. Images of high resolution transmission electron micros-copy measurements exhibited that the Co NPs of 5 nm in diameter were clearly embedded in SiO2 gate oxide. Capacitancevoltage mea-surements certainly exhibited at-band voltage shift of 2.2 V from 2 V to. capacitors with the embedded Co NPs were also studied as a function of tunnel oxide thickness to conrm the suitability of nonvolatilememory devices with metal NPs. The experimental results reveal that our unique laser process will give possible promise for experimentalecient formation or insertion of metal NPs inside the gate oxide.