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The crystallization temperature in GeTe solid electrolyte films was improved by in situ-nitrogen doping by rf magnetron co-sputtering technique at room temperature. The crystallization temperature of 250 oC in electrolyte films without nitrogen doping increased by approximately 300 oC, 350 oC, and above 400 oC in films deposited with nitrogen/argon flow ratios of 10, 20, and 30 %, respectively. A PMC memory device with Ge45Te55 solid electrolytes deposited with nitrogen/argon flow ratios of 20 % shows reproducible memory switching characteristics based on resistive switching at threshold voltage of 1.2 V with high Roff/Ron ratios. Nitrogen doping into the silver saturated GeTe electrolyte films improves the crystallization temperature of electrolyte films and does not appear to have a negative impact on the switching characteristics of PMC memory devices.