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We report the processing of InGaN/GaN epifilms on GaN-silicon substrates. High-quality In- GaN/GaN multi-quantum wells (MQWs) were grown on GaN-silicon substrates, and their membranes were successfully fabricated using a selective wet etching of silicon followed by a dry etching of the AlGaN buffer layer. With atomic force microscope (AFM) measurements and photoluminescence (PL) measurements, we investigated the physical and the optical properties of the InGaN/GaN MQWs membranes. On the InGaN/GaN MQW membranes, dielectric distributed Bragg reflectors (DBRs) were successfully deposited, which give, new possibilities for use in GaN microcavity and surface-emitting laser fabrication.