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R.F. Magnetron Sputtering법을 이용하여 Pt/Ti/SiO2/Si기판 위에 seed-layers 와 Ba0.66Sr0.34TiO3 박막을 제조하였다. 다양한 기판온도에 따른 BST 박막의 전기적인 특성(정전용량과 누설전류)과 seed-layer 층이 BST 박막에 미치는 영향을 조사하였다. BST 박막은 seed-layer 층을 삽입함으로써 박막의 결정성이 향상되었고, 박막의 기판온도(결정화온도)도 상당히 낮출 수 있었다. 순수한 BST에 비하여 seed-layer를 삽입한 BST 는 높은 유전상수와 낮은 유전손실 및 낮은 누설전류를 가지는 우수한 전기적 특성을 나타내었다. BST 박막의 전기적 특성은 기판온도에 따라 영향을 받고, seed-layer 에 의해 향상됨을 알 수 있었다.


Ba0.66Sr0.34TiO3 thin films and seed-layers were deposited on Pt/Ti/SiO2/Si substrate by R.F. magnetron sputtering method. Effects of various substrate temperature conditions on electrical properties(such as capacitance and leakage current) of BST thin films were studied. The effect of seed-layer was also studied. When seed-layer was inserted between BST and Pt, the crystallization of the BST thin films was considerably improved and the processing temperature was lowered. Compared to the pure BST thin films, dielectric constant, dielectric loss, and leakage current of BST thin films deposited on the seed-layer were considerably improved. It could be revealed that electrical properties are influenced by the substrate temperatures of BST thin films and are enhanced by the seed-layer.