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We apply the model for radiation effects on MOSFETs with concurrent thermal annealing to the case of space radiation. The results of total dose experiments on board KITSAT-1 are analyzed using the model. We find that the difference in responses of the two RADFETs, specially designed MOSFETs with thick gate oxides, comes from the built-in shielding effects due to the satellite structures. The oscillatory behavior seen in the threshold voltage shifts is identified to be the effect of a temperature variation. The estimated total dose is compared with that of the NASA trapped particle model.