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- Silicon dioxide (SiO2) layers were fabricated on Si3N4/SiO2/Si layer structures by low pressure chemical vapor deposition (LPCVD). Potassium and aluminum were then coimplanted by implanting potassium ions with the energy of 100 [keV] and dose of 5×1016 [cm-2] and 1×1017 [cm-2] into an aluminum buffer layer on the SiO2/Si3N4/SiO2/Si structure. The pH, pNa, and pK ion sensitivities of the resulting layers were investigated and compared to those of as-deposited silicon dioxide layer. The pK-sensitivity of the silicon dioxide was enhanced by the K and Al coimplantation. On the contrary, the pH and pNa-sensitivities of the coimplanted silicon dioxides were quite lower than that of the as-deposited silicon dioxide.