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Wafer-bonding techniques are key issues for the commercialization of microelectromechanical system(MEMS) devices. We propose a new wafer-bonding method that uses localized heating of the bonding interface at the Bragg peak of the proton beam. The energy absorbed in pyrex glass due to the proton-beam irradiation was numerically calculated for various proton energies by using the stopping and range of ions in matter(SRIM) program. 13-MeV proton beams were used to irradiate the surface of pyrex glass mounted on a silicon wafer, and the interface temperature change was measured as a function of the irradiation time at various beam currents. The pyrex glass and the silicon wafer had the same sizes of 10 mm × 10 mm. The thicknesses of the pyrex glass and the silicon wafer were 1 mm and 0.65 mm, respectively. At a fixed beam current, the interface temperature change showed a rapid increase before 50 seconds and the increase became very slow after 50 seconds. The final interface temperature was found to be determined by the proton beam current, and the final temperature increased with the beam current.