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Pad surface characteristics such as roughness, groove and wear rate of pad have a effect on the within wafer non-uniformity(WIWNU) in chemical mechanical polishing(CMP). Although WIWNU increases as the uniformity of roughness(Rpk: Reduced peak height) becomes worse in an early stage of polishing time, WIWNU decreases as non-uniformity of the Rpk value. Also, WIWNU decreases with the reduction of the pad stiffness, though original mechanical properties of pad are unchanged by the grooving process. In addition, conditioning process causes the inequality of pad wear during in CMP. The profile of pad wear generated by the conditioning process has a significant effect on the WIWNU. These experiments results could help to understand the effect of pad surface characteristics in CMP.