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- RuOx thin films were fabricated by the method of liquid delivery MOCVD using Ru(C8H13O2)3 as the precursor and their thermal effects and conductivity were investigated. Ru films deposited at 250 ℃ were annealed at 650 ℃ for 1min with Ar, N2 or NH3 ambient. The changes of the micro-structure, the surface morphology and the electrical resistivity of the Ru films after annealing were studied. Ar gas was more effective than N2 and NH3 gases as an ambient gas for the post annealing of the Ru films, because of smaller resistivity and denser grains. The X-ray diffraction and X-ray photoelectron spectroscopy results indicate that the RuO2 phase and the silicidation are not observed regardless of the ambient gases. The minimum resistivity of the Ru film is found to have the value of 26.35 μΩ-cm in Ar ambient. Voids were formed at Ru/TiN interface of the Ru layer after annealing in N2 ambient. The N2 gas generated due to the oxidation of the TiN layer accumulated at the Ru/TiN interface, forming bubbles; consequently, the stacked film may peel off the Ru/TiN interface.