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Using Cr2O3 thin film, we developed a novel etch-stop technique for the protection of silicon su rface morphology during deep ion coupled plasma etching of silica layers. With this technique we were able to etch a silica trench with a depth of over 20 μm without any damage to the exposed silicon terrace surface. This technique should be well applicable to fabricating silica planar lighwave circuit platforms for opto-electronic hybrid integration.


Using Cr2O3 thin film, we developed a novel etch-stop technique for the protection of silicon su rface morphology during deep ion coupled plasma etching of silica layers. With this technique we were able to etch a silica trench with a depth of over 20 μm without any damage to the exposed silicon terrace surface. This technique should be well applicable to fabricating silica planar lighwave circuit platforms for opto-electronic hybrid integration.