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Hf-silicate films were grown by using atomic layer deposition with Hf[N(CH3)(C2H5)]4 and SiH[N(CH3)2]3 precursors. The composition of the Hf-silicate films was excellently well controlled by using the ratio of the deposition cycles of HfO2 and SiO2 (Hf/Si). The physical and the electrical characteristics of the Hf-silicate films were compared for Hf/Si = 3/1, Hf/Si = 1/1, and Hf/Si = 1/3. The relative Hf/(Hf+Si) compositions were 58 %, 41 %, and 25 % for Hf/Si = 3/1, Hf/Si = 1/1, and Hf/Si = 1/3, respectively. The binding characteristics of the Hf-silicate films were shifted in the direction of higher binding energy with increasing of SiO2 portion, resulting in electric charging. The molecular structure of the Hf-silicate films was changed by the relative compositions of HfO2 and SiO2. In addition, the dielectric characteristics of the Hf-silicate films were directly proportional to the HfO2 portion.