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We report the theory of thin-sample -scan for materials, viz. diffusion-dominated photorefractives, having a nonlinearly induced phase that may be proportional to the spatial derivative of the intensity profile. The on-axis far-field intensity is approximately an even function of the scan distance on different positive and negative values for phase shift . In case of positive phase shift, the -scan graph shows a minimum and two maxima, while for the negative value, only one minimum is observed. The fact is that far-field beam profiles display beam distortion and shift of the peak as compared with Kerr-type or photovoltaic nonlinearities.