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SrBi2Ta2O9-Bi2SiO5 (SBT-BSO) thin lms have been prepared on Pt/Ti/SiO2/Si substrate by pulsed laser deposition at low temperature, 300 to 450 C . We succeeded in crystallizing SBT at 350 C and P-E hysterisis loops of SBT-BSO thin lm were observed and the curve was almost the same as that of SBT. Binding state of BSO has been investigated by XPS spectra, Raman spectra and AFM. As a result it is con rmed that the binding state of BSO in ceramics is di erent from that in lms prepared by PLD. Moreover we tried to anneal SBT and SBT-BSO thin lms in high pressure O2 atmosphere, and succeeded in improve ferroelectric properties about SBT.


SrBi2Ta2O9-Bi2SiO5 (SBT-BSO) thin lms have been prepared on Pt/Ti/SiO2/Si substrate by pulsed laser deposition at low temperature, 300 to 450 C . We succeeded in crystallizing SBT at 350 C and P-E hysterisis loops of SBT-BSO thin lm were observed and the curve was almost the same as that of SBT. Binding state of BSO has been investigated by XPS spectra, Raman spectra and AFM. As a result it is con rmed that the binding state of BSO in ceramics is di erent from that in lms prepared by PLD. Moreover we tried to anneal SBT and SBT-BSO thin lms in high pressure O2 atmosphere, and succeeded in improve ferroelectric properties about SBT.