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We studied the e ects of thermal annealing of ZnO ceramics by X-ray photoelectron spectroscopy, photoluminescence and X-ray scattering methods. The ZnO ceramics fabricated from the high purity ZnO powder (99.999 %) were annealed at 950 C in air and in N2 atmosphere. The ZnO ceramics annealed in N2 atmosphere have O-rich condition. The concentration of antisite oxide(OZn) increases when ZnO ceramics have the O-rich condition or N-compensation. As the concentration of antisite oxide(OZn) increases, the photoluminescence intensity of the green band emission increases.


We studied the e ects of thermal annealing of ZnO ceramics by X-ray photoelectron spectroscopy, photoluminescence and X-ray scattering methods. The ZnO ceramics fabricated from the high purity ZnO powder (99.999 %) were annealed at 950 C in air and in N2 atmosphere. The ZnO ceramics annealed in N2 atmosphere have O-rich condition. The concentration of antisite oxide(OZn) increases when ZnO ceramics have the O-rich condition or N-compensation. As the concentration of antisite oxide(OZn) increases, the photoluminescence intensity of the green band emission increases.