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IZTO films with compositions of (In2O3)77(ZnO)23−x(SnO2)x, x = 4, 6, 8 and 10 wt.% were prepared on PET substrates by using an rf-magnetron sputtering method. SiO2 as a bu er layer,was pre-coated between the IZTO layer and the PET by using ion-gun-assisted sputtering. The electrical resistivity, the carrier concentration, the Hall mobility and the electrical stability were investigated under various environments for IZTO films with various compositional ratios. The optical transmittances in the visible range and AFM images of their surface were also observed. The surface roughness and the adhesion of the IZTO films to substrates are largely enhanced by inserting the SiO2 bu er layer between the IZTO film and PET. The IZTO film with x = 6 wt.%deposited at room temperature in a pure Ar gas showed the lowest resistivity of 4.7 × 104 ·cm and the largest carrier concentration of 3.2 × 1020cm−3 in comparison with those of IZTO films with x= 4, 8 and 10 wt.%. The most excellent electrical stability against moist heat was also obtained in the film with x = 6 at.% which showed a very excellent surface roughness of below 1 nm. Therfore, we suggest (In2O3)77(ZnO)17(SnO2)6 as a TCO material with a low resistance and a high enough optical transmission in the visible range for applications to apply to flexible dispaly.