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The forward voltage drop of IGBT is studied numerically and analytically as a function ofgate length. An analytical expression is presented for the first time for the surface potential variation along the channel layer under the gate of IGBT. The surface potential drop and the carrier density near of IGBT analytically as a function of the gate length. The voltage-drop in the drift region near the gate decreases exponentialy, whereas that on the surface increases linearly with increasing the gate length, the sum of which exhibits an optimum gate length, resulting in a minimum forward voltage drop. Based on the surface potential drop, a remodelling of the forward voltage drop of IGBT is also proposed.