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We compared and analyzed ASER (Accelerated Soft Error Rate) for cell structures andmetal plate capacitance in the fabricated 16M SRAM. Application of the BNW (Buried NWELL) lowered the ASER value compared to the normal well structure. By applying the metal plate capacitor with the BNW, the lowest ASER value can be obtained. The thiner oxide thickness of the metal plate capacitor provides higher capacitance and lower ASER value. The ASER is improved from 2200 FIT to 1000 FIT after sole application of the BNW. However, it is dramatically improved to 15 FIT once the metal plate capacitor is additionally applied.