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Vanadium-doped bismuth lanthanum titanate lead-free Bi3:25La0:75(TixVx)3O12 (x = 0  0.10;BLTV-x) ceramics have been fabricated by using a solid-state reaction method. BLTV-0.01 ceramics exhibit a relatively high electromechanical coupling factor (kt = 20.2 %) and high remnant polarization (Pr = 11.7 C/cm2). Vanadium substitution for titanium-ion site can e ectively enhance the resistivity by one order of magnitude(1.74  1011cm). A small amount of vanadium substitution for titanium site on BLT can signi cantly reduce the space charge density and the in uence of domain pinning, which would be responsible for the improvement in the ferroelectricity and piezoelectricity.