초록 close

Landau-Khalatnikov simulation, a dynamical version of Landau-Devonshire theory, for ferroelectric switching properties is shown to be very useful in understanding the operation of ferroelectric random access memory devices. The simulated ferroelectric hysteresis loops and pulse-current responses agreed well with experimental results. Partial switching responses and external stress e ects are studied. The relation between the shape of hysteresis loops and switching-current responses is also studied. The simulated switching-current responses agreed well with conventional Kolmogorov-Avrami-Ishibashi switching theory independent of hysteresis-loop shape.