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Ferroelectric epitaxial and polycrystalline PbZr0:53Ti0:47O3 thin lms have been studied application for high density storage devices by using the methodology of the scanning probe microscope. It is necessary to bias properly to a SPM tip with low voltage, since the surface charge e ect is a dominant e ect when a high bias is applied. In addition, if the surface potential at the KFM image is zero after writing by some bias, we can infer that the interaction between the SPM tip and thesurface charge is equal to the interaction between the SPM tip and the ferroelectric polarization and then the induced surface charge is over 10-20 C/cm2. The epitaxial thin lms can more easily trap surface charges than the polycrystalline thin lms because polycrystalline thin lms has a lower coercive eld than epitaxial thin lm. To utilize the ferroelectric polarization e ect for high-density non-volatile storage devices, criteria are suggested.