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We have fabricated Ti metal lms on Al2O3 substrates by using DC magnetron sputtering method at di erent DC powers (1.5, 2.0 and 2.5 kW) in high vacuum (10က5 Torr), and we investigated the lms' scratch and resistivities. The thicknesses, the surface and the cross-sectional images of the Ti lms were observed by using scanning electron microscopy (SEM). The crystallinity of the lms was con rmed by using X-ray di raction (XRD). The SEM images con rmed the existence of interface layers between the Ti lms and the Al2O3 substrates. Energy dispersive spectroscopy (EDS) showed that the interface layers contained elemental Ti and Al, as well as TiO, Ti3Al, and TiAl3 compounds. The compounds were formed by interactions of al and O ions that had di used from the Al2O3 substrate with the Ti atoms in the Ti lms. This phenomenon could be explained by the di usion velocity of the Al and the O ions being enhanced due to gains in their thermal energies as a result of the DC power for sputtering the lms on to the Al2O3 substrates being DC power increased. The adhesion strength was enhanced because the lattice mismatch between the hexagonal phase of the Ti lm and the tetragonal phase of the Al2O3 substrate was alleviated by the formation of interface layers containing TiAl3 with a tetragonal phase and Ti2Al with a hexagonal phase. The electric resistivity of the Ti lms was not a ected by the variation in the DC power.