초록 close

Magnetic tunnel transistors (MTTs) based on AlOx tunnel barrier were formed to obtain more ecient spin-dependent transport of hot electrons. The insulating AlOx barriers were grown by a remote rf plasma oxidation method to enhance electrical and structural properties of the MTTs. Further emphasis in this work was placed on the improvement of Schottky barrier properties of Si collector with plasma and chemical pretreatment of Si-substrate. The highest magnetocurrent ratio and output current of the MTTs were experimentally observed to be about 6 % and 42 A at VEB of 0.5 V, respectively. Especially, a transfer ratio of about 10က2 was obtained by varying barrier heights of emitter and collector electrodes in our experiment.