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High speed and high sensitivity p-i-n/HBT photoreceivers were implemented using an optoelectronic integration technology, where the p-i-n InP/InGaAs waveguide photodiode and InP/InGaAs HBTs are made from vertically stacked epitaxial layers on a semi-insulating InP substrate. The parasitic e ects of the photodiode on the microwave performance of HBT are investigated, these being encountered in optoelectronic integrated circuits where the photodiode layers are grown under the InP/InGaAs HBT layers. We estimated a HBT unit current gain cut-o frequency fT of 82 GHz and the maximum oscillation frequency fmax of 64 GHz in the OEIC wafer with HBT on the photodiode layers at an emitter-collector voltage Vce of 1 V and a collector current Ic of 20 mA. These values represent 20 %-degraded rf performance, due to the parasitic junction capacitance of the p-i-n photodiode layer placed at the bottom of the HBT, compared with the values, fT of 107 GHz and fmax of 88 GHz, of the OEIC wafer with the photodiode on HBT.


High speed and high sensitivity p-i-n/HBT photoreceivers were implemented using an optoelectronic integration technology, where the p-i-n InP/InGaAs waveguide photodiode and InP/InGaAs HBTs are made from vertically stacked epitaxial layers on a semi-insulating InP substrate. The parasitic e ects of the photodiode on the microwave performance of HBT are investigated, these being encountered in optoelectronic integrated circuits where the photodiode layers are grown under the InP/InGaAs HBT layers. We estimated a HBT unit current gain cut-o frequency fT of 82 GHz and the maximum oscillation frequency fmax of 64 GHz in the OEIC wafer with HBT on the photodiode layers at an emitter-collector voltage Vce of 1 V and a collector current Ic of 20 mA. These values represent 20 %-degraded rf performance, due to the parasitic junction capacitance of the p-i-n photodiode layer placed at the bottom of the HBT, compared with the values, fT of 107 GHz and fmax of 88 GHz, of the OEIC wafer with the photodiode on HBT.