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Low dielectric constant SiOC(-H) lms have been prepared by plasma enhanced chemical vapor deposition by using bis-trimethylsilyl-methane (BTMSM) and O2 precursors. The annealing e ects on the structural and electrical properties were studied. The results indicate post-annealing could eciently remove the hydroxyl (-OH) related groups from the as-deposited lms and cause chemical structure re-arrangement, resulting in more nano-pores being formed in the annealed SiOC(-H) lms. The charge-trapping centers in the interface with Si substrate, as well as in the lm bulk, could be reduced during the annealing procedure, which causes a rightshift of the capacitancevoltage curve. The dielectric constant decreased from 3.1 to 2.1, and the refractive index decreased from 1.427 to 1.321, when the SiOC(-H) lm was annealed at 400 C for 30 minutes. The currentvoltage analysis indicates that the leakage-current density is 3.4  10 A/cm2 at an applied electric eld of 1 MV/cm, and the dominant conduction mechanism is Schottky emission in asdeposited and annealed SiOC(-H) lms at mid electric eld.


Low dielectric constant SiOC(-H) lms have been prepared by plasma enhanced chemical vapor deposition by using bis-trimethylsilyl-methane (BTMSM) and O2 precursors. The annealing e ects on the structural and electrical properties were studied. The results indicate post-annealing could eciently remove the hydroxyl (-OH) related groups from the as-deposited lms and cause chemical structure re-arrangement, resulting in more nano-pores being formed in the annealed SiOC(-H) lms. The charge-trapping centers in the interface with Si substrate, as well as in the lm bulk, could be reduced during the annealing procedure, which causes a rightshift of the capacitancevoltage curve. The dielectric constant decreased from 3.1 to 2.1, and the refractive index decreased from 1.427 to 1.321, when the SiOC(-H) lm was annealed at 400 C for 30 minutes. The currentvoltage analysis indicates that the leakage-current density is 3.4  10 A/cm2 at an applied electric eld of 1 MV/cm, and the dominant conduction mechanism is Schottky emission in asdeposited and annealed SiOC(-H) lms at mid electric eld.