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We present a simple fabrication method for and the characteristics of a high speed InGaAs/InP avalanche photodiode (APD) with one oating guard ring. The APD structure that we propose consists of InP multiplication layer with a greatly reduced width and a highly doped electric eld bu er layer, We also adopted a oating guard ring and a shaped main junction with recess etching for reliable operation of the APD. A long lifetime, exceeding 109 hours, was estimated from accelerated life tests. Also, reliable operation in the device center region was examined by measuring the two-dimensional gain. The gain and bandwidth product of the APDs was measured to be as high as 80 GHz.


We present a simple fabrication method for and the characteristics of a high speed InGaAs/InP avalanche photodiode (APD) with one oating guard ring. The APD structure that we propose consists of InP multiplication layer with a greatly reduced width and a highly doped electric eld bu er layer, We also adopted a oating guard ring and a shaped main junction with recess etching for reliable operation of the APD. A long lifetime, exceeding 109 hours, was estimated from accelerated life tests. Also, reliable operation in the device center region was examined by measuring the two-dimensional gain. The gain and bandwidth product of the APDs was measured to be as high as 80 GHz.