초록 close

Silicon nitride (SiNx) film is a promising material for anti-re ection coating and passivation of multicrystalline silicon (mc-Si) solar cells. In this work, a plasma-enhanced chemical-vapor deposition (PECVD) system with batch-type reactor tube was used to prepare highly robust SiNx lms for screen-printed mc-Si solar cells. The gas ow rate ratio, R = [SiH4]/[NH3], in a mixture of silane and ammonia was varied in the range of 0.091  0.235 while xing the total ow rate of the process gases to 4,200 sccm. The refractive index of the SiNx lm deposited with a gas ow rate ratio of 0.091 was measured to be 2.03 and increased to 2.37 as the gas ow rate ratio increased to 0.235. The highest eciency of the cell was 14.99 % when the ow rate of SiH4 was 350 sccm (R = 0.091). Generally, we observed that the eciency of the mc-Si solar cell decreased with increasing R. From the analysis of the re ectance and the quantum eciency of the cell, the decrease in the eciency was shown to originate mainly from an increase in the surface reflectance for a high flow rate of SiH4 during the deposition of SiNx films.


Silicon nitride (SiNx) film is a promising material for anti-re ection coating and passivation of multicrystalline silicon (mc-Si) solar cells. In this work, a plasma-enhanced chemical-vapor deposition (PECVD) system with batch-type reactor tube was used to prepare highly robust SiNx lms for screen-printed mc-Si solar cells. The gas ow rate ratio, R = [SiH4]/[NH3], in a mixture of silane and ammonia was varied in the range of 0.091  0.235 while xing the total ow rate of the process gases to 4,200 sccm. The refractive index of the SiNx lm deposited with a gas ow rate ratio of 0.091 was measured to be 2.03 and increased to 2.37 as the gas ow rate ratio increased to 0.235. The highest eciency of the cell was 14.99 % when the ow rate of SiH4 was 350 sccm (R = 0.091). Generally, we observed that the eciency of the mc-Si solar cell decreased with increasing R. From the analysis of the re ectance and the quantum eciency of the cell, the decrease in the eciency was shown to originate mainly from an increase in the surface reflectance for a high flow rate of SiH4 during the deposition of SiNx films.