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Intraband transition linewidths due to longitudinal optical phonon scattering for the electrons in quantum wells in GaN are examined theoretically by using a projection technique. The lineshape factor appearing in the conductivity tensor contains the electron and the phonon distribution functions properly; thus, it becomes possible to explain the phonon emissions and absorptions in all electron transition processes, which implies that the approach is quite acceptable. We find that the width for GaN increases with the temperature, but decreases with the well width. This prediction is expected to be of help in some future experimental works.