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- The double layers of SiO2/Si3N4 have superior charge storage stability than a single layer of SiO2. Many researchers are very interested in the charge storage mechanism of SiO2/Si3N4 [1,2]. In this paper, the electrical characteristics of thermal oxide and atmospheric pressure chemical vapor deposition (APCVD) of Si3N4 have been investigated and explained using high frequency capacitance-voltage measurements. Additionally, this paper will describe capacitance-voltage characteristics for double layers of SiO2/Si3N4 by "Athena", a semiconductor device simulation tool created by Silvaco, Inc.