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- Capacitor material utilized in the downsizing passive devices and integration of passive devices requires the physical and electrical properties at given area such as capacitor thickness reduction, relative dielectric constant increase, low leakage current and thermal stability. common capacitor materials, Al2O3, SiO2, Si3N4, SiO2/Si3N4, TaN and et al., used until recently have reached their physical limits in their application to integration of passive devices.Ta2O5 is known to be a good alternative to the existing materials for the capacitor application because of its high dielectric constant (25∼35), low leakage current and high breakdown strength. Despite the numerous investigations of Ta2O5 material, there have little been established the clear understanding of the annealing effect on capacitance characteristic and conduction mechanism. This study presents the dielectric properties of Ta2O5 MIM capacitor structure processed by O2 RTA oxidation. X-ray diffraction patterns showed the existence of amorphous phase in 600℃ annealing under the O2 RTA and the formation of preferentially oriented-Ta2O5 in 650, 700℃ annealing and the AES depth profile showed O2 RTA oxidation effect gives rise to the O2 deficiened into the new layer. The leakage current density respectively, at 3∼11×10-2(kV/cm) were 10-3∼10-6(A/cm2). In addition, behavior is stable irrespective of applied electric field. the frequency vs capacitance characteristic enhanced stability more then Ta2O5 thin films obtained by O2 reactive sputtering. The capacitance vs voltage measurement that, Vfb(flat-band voltage) was increase dependance on the O2 RTA oxidation temperature.