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- AlN thin film has been deposited on Al2O3 substrate by reactive radio frequency(RF) magnetron sputtering method under various operating conditions such as working pressure, fraction of nitrogen partial pressure, and substrate temperature. Scanning Electron Microscope(SEM), X-ray Diffraction(XRD), and Atomic Force Microscope(AFM) have been measured to find out structural properties and preferred orientation of AlN thin films.SAW velocity of IDTs/AlN/Si structure was about 5038[㎧] at the center frequency of 251.9[㎒] and insertion loss was measured to be relatively low value of 35.6[㏈]. SAW velocity of IDTs/AlN/Al2O3 structure was improved to be about 5960[㎧] at the center frequency of 296.7[㎒].