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- In this paper, we studied the physical and electrical characteristics of WSix thin film with respect to the adoption of the DCS (dichlorosiliane) post flow and the variation of deposition temperature. XRD measurements show that as deposited thin film has a hexagonal structure regardless of deposition process. However, we find that the phase of thin film has changed to a tetragonal structure after the heat treatment at 680℃. Adoption of DCS post flow and increment of deposition temperature result in the increments of Si/W composition ratio. These conditions also result in the increment of sheet resistance by the amount 3.0∼4.2 Ω/□, but give the tendency in the decrement of stress by 0.27∼0.3 E10dyne/cm2. We also find that the contact resistance of word line and bit line interconnection was decreased by the amount 5.33∼16.43 μΩ-cm2, when applying DCS post flow and increasing deposition temperature.