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Recent data on state-of-the-art SOI structures are reported, in order to reveal the key role of the device dimensions: thickness of the buried oxide, gate oxide, and silicon lm. MOSFET miniaturization enables new physics mechanisms. The self-heating problems in SOI MOSFETs can be solved by replacing the buried oxide with a di erent dielectric that o ers improved thermal conductivity. The Gate-Induced Floating Body E ects (GIFBE) are described and shown to depend on the device geometry and frequency. In ultra-thin SOI lms, the coupling e ects are ampli ed, leading to interesting consequences for double-gate operation. The operation principles and main features of transistors with 2, 3 or 4 gates are discussed.


Recent data on state-of-the-art SOI structures are reported, in order to reveal the key role of the device dimensions: thickness of the buried oxide, gate oxide, and silicon lm. MOSFET miniaturization enables new physics mechanisms. The self-heating problems in SOI MOSFETs can be solved by replacing the buried oxide with a di erent dielectric that o ers improved thermal conductivity. The Gate-Induced Floating Body E ects (GIFBE) are described and shown to depend on the device geometry and frequency. In ultra-thin SOI lms, the coupling e ects are ampli ed, leading to interesting consequences for double-gate operation. The operation principles and main features of transistors with 2, 3 or 4 gates are discussed.